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Title:
FILM-FORMING COMPOSITION AND INSULATING FILM-FORMING MATERIAL
Document Type and Number:
Japanese Patent JP2002097414
Kind Code:
A
Abstract:

To obtain a film-forming composition and an insulating film-forming material, capable of forming a silica film having small relative dielectric constant and small residual stress of the film, and excellent in mechanical strength, as an interlaminar insulating film material in a semiconductor element, or the like.

The film-forming composition comprises (A) a silicone polymer which is obtained by reacting a silane compound with metallic lithium and/or metallic magnesium and (B) a hydrolysis condensate which is obtained by hydrolyzing and condensing the silane compound.


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Inventors:
JO YOSHIHIDE
NISHIKAWA MICHINORI
YAMADA KINJI
Application Number:
JP2000289834A
Publication Date:
April 02, 2002
Filing Date:
September 25, 2000
Export Citation:
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Assignee:
JSR CORP
International Classes:
C08G77/60; C09D5/25; C09D183/00; C09D183/02; C09D183/04; C09D183/14; H01L21/312; H01L21/316; (IPC1-7): C09D183/04; C08G77/60; C09D5/25; C09D183/00; C09D183/02; C09D183/14; H01L21/312; H01L21/316
Domestic Patent References:
JPH04311781A1992-11-04
JP2002097274A2002-04-02
JPH10183062A1998-07-07
JPH11279280A1999-10-12
JPH11271981A1999-10-08
JP2000063761A2000-02-29
JP2000049154A2000-02-18
Foreign References:
US4276424A1981-06-30



 
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