Title:
FILM FORMING METHOD
Document Type and Number:
Japanese Patent JPS61212016
Kind Code:
A
Abstract:
PURPOSE:To obtain a high purity and high quality deposition film of excellent adhesivity with a substrate in an excellent reproducible manner by a method wherein, after a beam of light to be used for cleaning of a substrate is made to irradiate on the substrate provided in a reaction chamber, raw gas is introduced into the reaction chamber, and the deposition film is formed by projecting a beam of light to the raw gas. CONSTITUTION:A substrate 6 is provided in a reaction chamber 3, and the reaction chamber 3 is decompressed. After the desired quantity of oxygen or oxygen containing gas is introduced into the reaction chamber 3 as occasion demands, a beam of light 1 is made to irradiate on the substrate 6 through a light transmitting window 2, and the cleaning work is performed on the substrate 6. After the reaction chamber 3 is brought into the desired pressure, the raw gas to be used for formation of a deposition film is introduced into the reaction tube 3 from a raw gas cylinder 9. Then, the raw gas in the reaction chamber 3 is decomposed or polymerized by projecting the light of desired wavelength, and a desired film is obtained on the substrate 6. The same light or different lights may be used for cleaning of the substrate and the decomposition or polymerization of the raw gas.
Inventors:
YAMAGAMI ATSUSHI
SANO MASAFUMI
SANO MASAFUMI
Application Number:
JP5244585A
Publication Date:
September 20, 1986
Filing Date:
March 18, 1985
Export Citation:
Assignee:
CANON KK
International Classes:
C23C16/48; H01L21/205; H01L31/04; (IPC1-7): C23C16/48; H01L31/04
Attorney, Agent or Firm:
Wakabayashi Tadashi
Previous Patent: PHOTOCHEMICAL VAPOR DEPOSITION EQUIPMENT
Next Patent: SOLID-PHASE EPITAXIAL GROWTH METHOD FOR NISI2 FILM
Next Patent: SOLID-PHASE EPITAXIAL GROWTH METHOD FOR NISI2 FILM