PURPOSE: To obtain the vacuum device capable of being efficiently cleaned by effectively introducing a cleaning gas into a vacuum vessel by providing ≥1 exclusive inlets for introducing the cleaning gas into the vacuum vessel capable of being kept at a reduced pressure.
CONSTITUTION: When amorphous silicon is formed, for example, a large amt. of the yellowish-brown deposit on the inner wall of the vacuum vessel 1, etc., is removed as follows. Namely, a cleaning gas contg. an interhalogen compd. such as ClF and ClF3 or an inorg. fluoride such as BF3 and NF3 is diluted with gaseous Ar, etc., and introduced into the vessel 1 from the exclusive inlets 7. The pressure in the vessel 1 is kept at 10Torr, a substrate holder is heated to 200-300°C, the inner wall heater of the vessel 1 is kept at 200-300°C, the high-frequency power is controlled to 1W/cm2, and cleaning is carried out for 1hr. The vessel 1 is then purged with gaseous H2, and evacuation is repeated. As a result, the amorphous silicon and powdery product deposited on every part in the vessel 1 are completely removed.
NAGASHIMA TOMOMICHI
MINAMI KOJI
| JP46019008A | ||||
| JPS52131470A | 1977-11-04 | |||
| JPS5493360A | 1979-07-24 | |||
| JPS61181131A | 1986-08-13 | |||
| JPS62214175A | 1987-09-19 | |||
| JPH01152274A | 1989-06-14 | |||
| JPS6487773A | 1989-03-31 |