Title:
FILM THICKNESS MEASURING INSTRUMENT AND METHOD, AND METHOD FOR MANUFACTURING FILM THICKNESS REFERENCE WAFER
Document Type and Number:
Japanese Patent JP3742319
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To repeatably measure and manage a thickness of a very thin insulating film whose increase of thickness cannot be neglected.
SOLUTION: The film thickness measuring instrument measures a single layer or a plurality of layers of the very thin insulating films formed on a wafer 11, by using optical technique of a single wavelength ellipsometry, spectro- ellipsometry, or reflection and interference of a single wavelength or a plurality of wavelengths. The instrument has a pre-process mechanism for exposing the wafer to be measured 11 to corona discharge by transmitting the wafer beneath a corona discharging wire 12 under air or an atmosphere, including oxygen and nitrogen, just before measuring the thickness of the insulating film by using optical technique. The corona discharge ionizes the oxygen in the air and generates ozone and oxygen ions. Since an organic material for changing an optical characteristic is removed by the ozone and the oxygen ions, an intrinsic thickness of the insulating film formed on a surface of the wafer can be accurately and repeatably measured and managed when the thickness of the insulating film is measured by the optical technique.
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Inventors:
Yuko Kubo
Kenji Yoneda
Kenji Yoneda
Application Number:
JP2001223121A
Publication Date:
February 01, 2006
Filing Date:
July 24, 2001
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G01B11/06; H01L21/66; G01N1/00; G01N1/34; (IPC1-7): H01L21/66; G01B11/06; G01N1/00; G01N1/34
Domestic Patent References:
| JP2001191044A | ||||
| JP2001093954A | ||||
| JP9069508A | ||||
| JP9022885A |
Other References:
Adrien Danel et al,A novel pretreatment for thin-film measurements,Solid State Technology,1999年 9月,Vol.42, No.9,p.S3-S6
Attorney, Agent or Firm:
Akio Miyai