Title:
FIXED CHARGE EXPRESSION METHOD, THIN FILM TRANSISTOR MANUFACTURING METHOD, AND THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP2023176664
Kind Code:
A
Abstract:
To provide a fixed charge expression method, a thin film transistor manufacturing method, and a thin film transistor that efficiently generate necessary fixed charges in an insulating film on the back channel side used in a semiconductor device while suppressing deterioration in film quality.SOLUTION: A method for developing fixed charges is a method of developing fixed charges in an insulating film on the back channel side of a thin film transistor 100 having a channel layer 3 made of an oxide semiconductor, after forming an insulating film 21, a metal film 22 is formed on the surface of the insulating film, and the fixed charges are developed in the insulating film 21 by implanting ions into the insulating film 21 through the metal film 22.SELECTED DRAWING: Figure 3
More Like This:
Inventors:
SAMEJIMA TOSHIYUKI
SETOGUCHI YOSHITAKA
ANDO YASUNORI
SAKAI TOSHIHIKO
SETOGUCHI YOSHITAKA
ANDO YASUNORI
SAKAI TOSHIHIKO
Application Number:
JP2022089081A
Publication Date:
December 13, 2023
Filing Date:
May 31, 2022
Export Citation:
Assignee:
UNIV TOKYO AGRICULTURE & TECHNOLOGY
NISSIN ELECTRIC CO LTD
NISSIN ELECTRIC CO LTD
International Classes:
H01L21/336; H01L21/265; H01L21/425; H01L29/786
Attorney, Agent or Firm:
Ryuhei Nishimura
Shindai Saito
Atsushi Nakamura
Haruko Maeda
Shindai Saito
Atsushi Nakamura
Haruko Maeda