PURPOSE: To realize a contact with a low electric resistance by a method wherein one or plurality of protrusions of required forms are formed on the contact surface of a socket terminal to be brought into contact with an external terminal and the film on the external terminal is scraped off when a cover is pushed to close.

CONSTITUTION: One or a plurality of protrusions 7 of required forms are provided on the contact surface of a socket terminal 3 to be brought into contact with an external terminal 6. When a package 5 of a semiconductor device is fitted to a socket 1, as the protrusions 7 are provided on the contact surface of the terminal 3, a high electric resistance film such as an oxide film formed on the surface of the terminal 6 is scraped off by the compression force of the cover 4 of the socket 1. With this constitution, a contact with a low electric resistance can be realized.