To provide a flat-panel type image sensor having high reliability in strength.

The thickness of an insulating resin 6 is uniform in a region, in which a semiconductor film 3 is formed on an active matrix substrate 2, shown by a region Y1, and a region, in which a semiconductor film 3 is not formed on an active matrix substrate 2, shown by a region X1. Consequently, stresses generated inside the insulating resin 6 in a flat-panel type image sensor 1 can be reduced, bending of the active matrix substrate 2 can be prevented, and the resistance of the flat-panel type image sensor 1 with respect to impacts can be improved.