To make it possible to clarify the relation between the size and depth of a flaw by providing a display means displaying the distribution showing the relation between the flaw size and the flaw depth based on the values corresponding to the flaw size and the flaw depth.
Radiation optical systems 15a, 15b radiate the radiation light with two wavelengths having different infiltration depths into a solid (sample) 1. A detection optical system 16 detects the scattered light intensity with a shorter wavelength and the scattered light intensity with a longer wavelength from a flaw generated by the radiation light with two wavelengths. A calculating means (computer) 17 calculates a value corresponding to the flaw size and a value corresponding to the flaw depth with the scattered light intensity detected by the detection optical system 16. A display means 20 displays the distribution showing the relation between the value corresponding to the flaw size and the value corresponding to the flaw depth calculated by the calculating means 17, thereby the size/depth distribution of flaws of a semiconductor wafer can be displayed.
OKURA OSAMU
ISOMAE SEIICHI
MINOWA KIYOUKO
MAEJIMA MUNEO
MATSUI SHIGERU
MATSUDA YASUSHI
SHIMIZU HIROBUMI
