Title:
MANUFACTURE OF OHMIC ELECTRODES
Document Type and Number:
Japanese Patent JP3168948
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To produce ohmic electrodes having low contact resistance and high heat resistance with improvement in uniformity of a substrate, by successively laminating thin films made of predetermined four kinds of elements on a semiconductor substrate of a III-V group composition, respectively, and giving heat treatment to the III-V group semiconductor substrate composition having the thin films.
SOLUTION: An n-type GaAs layer 2 is provided on a semi-insulating GaAs substrate 1 by MBE method or the like, followed by forming a photoresist pattern 3 thereon by a photolithography method. Subsequently, the substrate 1 is immersed in a sodium ammonium solution to form a sulfur layer 4 to several atoms on the n-type GaAs layer 2, followed by further laminating thereon an Ni thin film 5, an In thin film 6 and a Ge thin film 7 successively by vacuum vapor deposition method or the like. Further, after forming an ohmic electrode pattern by removing the photoresist pattern 3 using an organic solvent, the resultant is subjected to a heat treatment by lamp annealing method to form an n+GaAs regrown layer 8 and an n+InGaAs regrown layer 9, followed by further laminating thereon an NiGe alloy layer 10, thus forming an ohmic electrode.
Inventors:
Yasushi Shiraishi
Application Number:
JP20340297A
Publication Date:
May 21, 2001
Filing Date:
July 29, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/28; H01L21/331; H01L21/338; H01L29/205; H01L29/43; H01L29/73; H01L29/737; H01L29/812; (IPC1-7): H01L21/28; H01L29/205
Domestic Patent References:
| JP6267887A | ||||
| JP2192119A | ||||
| JP3236224A | ||||
| JP6181622A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)