PURPOSE: To form the titled Si layer with superior dark resistance and photoconductivity by almost uniformly irradiating electron beams toward a substrate to activate a modifying gas in the vicinity of the substrate and by introducing the activated gas into an amorphous Si layer during deposition on the substrate so as to form a uniform distribution.
CONSTITUTION: Si 11 evaporated from an evaporation source 2 in a bell jar 3 by heating with an electron beam heater 7 in vacuum is deposited on a substrate 1 as amorphous Si (a-Si). At the same time, a modifying gas is introduced into the jar 3 from a pipe 6 at a uniform rate, and thermions 9 from a thermion generator 10 are allowed to act on the gas in the vicinity of the substrate 1. The activated or ionized gas such as H+ is attracted on the substrate 1 having negative potential, and it is efficiently introduced into an a-Si film during deposition on the substrate 1. Accordingly, a vapor-deposited film of a-Si:H or the like contg. dangling bonds can be obtd. The film has sufficient dark resistance and photosensitivity, and it is homogeneous.
SATOU SHIGERU
MANO SHIGERU
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