To provide a method for forming a capacitor of a semiconductor element using high-temperature oxidation by which high capacitance can be achieved.

In a method for forming capacitor of semiconductor element, a second conductive film 106 for silicification is vapor-deposited on a semiconductor substrate 100 in the form of a blanketing method prior to a dielectric film is vapor-deposited, and the short-circuiting defect between lower electrodes 104 is suppressed by forming the oxide 018 of a second conductive film, such as titanium dioxide, etc., on an interlayer insulating film 102 by executing a high-temperature oxidation process. A high capacitance can be achieved by simultaneously forming silicide layers 107 containing second conductive films and the oxide 108 of the second conductive film, having a high dielectric constant on the surfaces of lower electrodes 104 and using the oxide 108 as dielectric films.