Title:
FORMATION OF CHEMICAL AMPLIFICATION RESIST PATTERN AND APPARATUS THEREFOR
Document Type and Number:
Japanese Patent JP3796796
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the flaring of resist patterns and to improve patterning accuracy by applying SOG on a substrate, subjecting this SOG to a density increasing treatment, oxidizing the film and patterning the SOG oxidized film by using a chemical amplification resist.
SOLUTION: Plural sheets of semiconductor substrates (wafers) 1 are taken out by one sheet each from a carrier 2 and, after the SOG 4 is applied atop the substrates 1 in a spin coater chamber 3, the substrates are placed on a heater 6 in a preheating chamber 5 where the substrates are preheated to remove moisture before the solidification of the SOG. The plural wafers 1 housed in a quartz carrier 2 are subjected to the density increasing treatment in a heating chamber 7. This density increasing treatment is executed by setting the pressure in the chamber at 0.1 to 100MPa and the temp. at about 1000°C in an inert gaseous atmosphere of nitrogen, oxygen, air or He, etc. The SOG oxidized film is thereafter formed by ashing this SOG film, and the patterns are formed on the SOG oxidized film by using the chemical amplification resist.
Inventors:
Hiroyuki Nakano
Application Number:
JP3885296A
Publication Date:
July 12, 2006
Filing Date:
February 01, 1996
Export Citation:
Assignee:
ソニー株式会社
International Classes:
G03F7/004; G03F7/26; G03F7/11; G03F7/38; H01L21/302; H01L21/316; (IPC1-7): G03F7/38; G03F7/004; H01L21/302
Domestic Patent References:
| JP7078816A | ||||
| JP5259064A | ||||
| JP5150440A | ||||
| JP5283377A | ||||
| JP5506330A | ||||
| JP8252506A | ||||
| JP6216115A | ||||
| JP5072741A |
Attorney, Agent or Firm:
Funabashi Kuninori