Title:
FORMATION OF COMPOSITE THIN FILM BY ION PLATING AND IN PLATING DEVICE FOR FORMING COMPOSITE THIN FILM
Document Type and Number:
Japanese Patent JP2790075
Kind Code:
B2
Abstract:
PURPOSE: To form a composite thin film with one crucible by monitoring and controlling the composition, composition ratio of the metal and atmospheric gas in the plasma close to a substrate under vapor deposition.
CONSTITUTION: A TiAl alloy, for example, is placed in a crucible 2 in a vacuum chamber 1, gaseous nitrogen is introduced as a reacting gas, and a composite thin film of (Ti,Al)N is formed on a substrate 3 by activated reactive vapor deposition. At this time, the composition ratio of the metallic composition present in the plasam close to the substrate, the composition of the reacting gas and atmospheric gas, etc., are monitored by a plasma controller 10 through the emission spectrophotometer 7 and mass spectrometer 8, and an electron gun 2a and a filament 12 are controlled through an electron gun power source 9 and a filament power source 11. Consequently, a composite thin film provided with a high-degree function is easily formed at a lower cost by using one crucible 2.
Inventors:
IDE YUKIO
INADA KAZUNORI
NAKAMURA TAKASHI
MAEDA MASASHI
INADA KAZUNORI
NAKAMURA TAKASHI
MAEDA MASASHI
Application Number:
JP10893395A
Publication Date:
August 27, 1998
Filing Date:
March 29, 1995
Export Citation:
Assignee:
YAMAGUCHIKEN
International Classes:
C23C14/32; C23C14/54; (IPC1-7): C23C14/32; C23C14/54
Domestic Patent References:
| JP53125277A | ||||
| JP5278779A | ||||
| JP59213033A | ||||
| JP621868A | ||||
| JP5815652A |
Attorney, Agent or Firm:
Yukio Murata