FORMATION OF CRYSTAL FILM

Title:

FORMATION OF CRYSTAL FILM

Document Type and Number:

Japanese Patent JP3217419

Kind Code:

B2

Abstract:

PURPOSE: To well obtain a crystal film having desired grain boundary and crystal grain sizes over a large area by selectively implanting ions to an amorphous silicon film formed by using higher order silane as a gaseous raw material, then subjecting the film to a heat treatment.
CONSTITUTION: The amorphous silicon film 2 is formed on a base body 1 by using the second or higher order silane as the gaseous raw material. The ions of Si-, etc., are selectively implanted into the amorphous silicon film 2 exclusive of the parts to be formed as nucleus forming regions 3 thereof. The parts not implanted with the ions are the nucleus forming regions 3. The film is then heat-treated at the crystallization critical temp. or above, by which single crystal nuclei 5 are formed preferentially in the nucleus forming regions 3. Further, the heat treatment of the amorphous silicon film 2 is continued to grow the crystal nuclei 5 and to form the crystal grains. The one crystal grain 6a grows transversely to form the grain boundary 7 in contact with the crystal grain 6b grown from the adjacent nucleus forming region 3 at the growth end face. The amorphous silicon film 2 is preferably heat-treated at the temp. below the crystallization critical temp. before the ion implantation stage.

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Inventors:

Hideya Kumomi

Application Number:

JP1027592A

Publication Date:

October 09, 2001

Filing Date:

January 23, 1992

Export Citation:

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Assignee:

Canon Inc

International Classes:

C23C16/56; C23C14/48; C23C14/58; C30B29/06; C30B31/22; H01L21/20; (IPC1-7): C23C16/56; C23C14/48; C23C14/58; C30B29/06; C30B31/22; H01L21/20

Domestic Patent References:

JP555142A

Attorney, Agent or Firm:

Nobuyuki Kaneda (2 others)

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