Title:
FORMATION OF FINE PATTERNS
Document Type and Number:
Japanese Patent JPH0934118
Kind Code:
A
Abstract:
To provide a fine pattern forming method capable of attaining good pattern shape and sufficient depth of focus even on a substrate having small reflectivity.
In the method for forming the fine patterns an antireflection layer 3 is disposed between a resist 4 and a layer 2 to be processed by applying the resist 4 on the layer 2 to be processed on a semiconductor substrate 1 and exposing the resist 4, then developing the resist, and the resist having high transmittance is constituted by using a resin contg. org. cyclic hydrocarbon groups having a transmittance of ≥70% to exposing light, such as KrF excimer laser (248nm), as the resist 4.
Inventors:
OFUJI TAKESHI
NAKANO KAICHIRO
MAEDA KATSUMI
NAKANO KAICHIRO
MAEDA KATSUMI
Application Number:
JP18375695A
Publication Date:
February 07, 1997
Filing Date:
July 20, 1995
Export Citation:
Assignee:
NEC CORP
International Classes:
G03F7/039; G03F7/11; H01L21/027; (IPC1-7): G03F7/11; G03F7/039; H01L21/027
Domestic Patent References:
| JPH07120927A | 1995-05-12 | |||
| JPH05257284A | 1993-10-08 | |||
| JPS61185928A | 1986-08-19 | |||
| JPH02244154A | 1990-09-28 |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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