To provide a method for forming a gate electrode of a semiconductor device, in which a sophisticated mask aligning process is not used, and damage to and deformation of the gate electrode are prevented, by forming dummy photoresist layers on the semiconductor substrate in the lift-off process to make the position of the substrate surface higher than the top end of the gate electrode.
On a semiconductor substrate 1, photoresist layers having an opening are formed, and after evaporating a metal layer 3 on the whole surface, the metal layer 3 that is on the photoresist layers is lifted off while the metal layer 3 remaining directly on the semiconductor substrate 1 is used as a gate electrode 3', wherein the photoresist layers are constituted by a lower-lying photoresist layer 8 and an upper-lying photoresist layer 9 stacked on the lower- lying photoresist layer 8 so that the position of the top surface of the photoresist layers is made higher than that of the top surface of the gate electrode 3'. In the lift-off process, the metal layer 3 that is on the upper-lying photoresist layer 9 is lifted off, wherein only the upper-lying photoresist layer 9 is solved selectively while the lower-lying photoresist layer 8 remains to protect the gate electrode 3'.
MATSUOKA TAKASHI
OKU YUUKI
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