PURPOSE: To provide the concrete formation method, of a pad, wherein the pad is formed on the side face of a semiconductor chip regarding the formation method of the pad which is formed on a semiconductor substrate and which is used to connect an internal circuit formed inside the semiconductor substrate to a lead frame.

CONSTITUTION: The surface of a wafer is covered with a resist film 14, except the surface areas for pad formation that overlap scribe lines. Pad grooves 12 are formed in the pad formation part by an anisotropic etching method. The resist film is removed. A pad material 16 is formed on the surface of the wafer. A film 18 used to flatten the surface on which the pad material has been deposited is formed. The film and the pad material are etched back by leaving the material inside the pad groove.