PURPOSE: To enhance the dry etching resistance without reducing the sensitivity by using an ionized radiation resist having a 2-layered structure whose upper layer contains polysilsesquioxane.
CONSTITUTION: A substrate 1 is successively coated with a laye 2 of Al, Al alloy, SiO2 or the like to be worked, the 1st resist layer 3 of polystyrene or phenol resin etchable with oxygen plasma and having high dry etching resistance, and the 2nd resist layer 4 made of mixture of a negative type resista material with polysilsesquioxane represented by formula 1 (where n is polymn. degree, R1 is H or ≥1 kind of group selected from phenyl, 1W4C alkyl and CN, and R2 is ≥1 kind of group selected from phenyl, 1W4C alkyl and CN). By irradiating ionized radiation such as electron beams or X-rays, only the resist layer 4 is exposed, and it is developed. The disclosed part of the resist layer 3 is then removed by etching with oxygen plasma, and the layer 2 to be worked is patterned by etching with an etchant.
KITAMURA TATEO
NAITOU JIROU
KITAKOUJI TOSHISUKE
