PURPOSE: To obtain a method capable of minimizing the limit of miniaturization of a fine pattern to be formed of a mask or a reticle not required for miniaturization by performing double exposure to transfer a straight line pattern without acute angle, and forming a pattern with sharpened end in a wedge state at the heavy part of first and second exposures.

CONSTITUTION: In a method of transferring a pattern 3 on a mask 4 or on a reticle to a resist 2 on a wafer 1 by a close contact exposure, a proximity exposure or an actual size projection, contract projection, or an enlarged projection exposure, double exposures are so performed as to transfer the pattern 3 at an acute angle, and a pattern sharpened at the end in a wedge state is formed at the heavy part 10 of first exposure 9 and second exposure 8. For example, the wafer 1 is coated with the resist 2, approached with a X-ray mask 4 having a straight absorber pattern 3, and exposed with a soft X-ray 5 of synchrotron radiation light. Then, either one or both of the wafer 1 and the mask 4 are rotated at an acute angle, and second exposure is performed by intersecting the second exposure pattern 8 with the first exposure pattern 9 at an acute angle.