Title:
FORMATION OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH04241425
Kind Code:
A
Abstract:
PURPOSE: To form an insulated-gate field-effect transistor having a low carrier concentration area for relaxing electric field adjacent to a high carrier concentration source-drain area.
CONSTITUTION: After a gate insulating film 2 is formed on a silicon substrate 1, a low-concentration area is formed by implanting ions by using a gate electrode 3 as a mask and an insulating thin film is deposited. After the insulating thin film is deposited, a high carrier concentration source-drain area 4 is formed by ion implantation without etching the insulating thin film.
Inventors:
KAKIMOTO SEIZO
IGUCHI KATSUJI
IGUCHI KATSUJI
Application Number:
JP2365891A
Publication Date:
August 28, 1992
Filing Date:
January 16, 1991
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/265; H01L21/266; H01L21/336; H01L29/78; (IPC1-7): H01L21/265; H01L21/336; H01L29/784
Attorney, Agent or Firm:
Shintaro Nogawa