Title:
FORMATION OF SILICON NITRIDE WHISKER
Document Type and Number:
Japanese Patent JP2001019553
Kind Code:
A
Abstract:
To provide a method for forming silicon nitride whiskers in a high efficiency only from a stable raw material by avoiding instability of the composition of natural ore.
SiO2 of main component is mixed with a proper amount of carbon fiber or carbon powder. The mixture is put in a reactor and reacted in the reactor in a nitrogen gas atmosphere while heating to attach and form silicon nitride whiskers on the surface of the reactor. The partial pressure range of SiO gas in the formation reaction of silicon nitride whiskers is set to 1×10-2 to 1×10-4 atm.
Inventors:
SHIMADA SHIRO
MOMOSHIMA SACHITADA
OGAWA HIROYASU
TANAKA TORU
TAKAMOTO NAOKI
MOMOSHIMA SACHITADA
OGAWA HIROYASU
TANAKA TORU
TAKAMOTO NAOKI
Application Number:
JP18668599A
Publication Date:
January 23, 2001
Filing Date:
June 30, 1999
Export Citation:
Assignee:
SHIMADA SHIRO
ISHIKAWAJIMA HARIMA HEAVY IND
FURUKAWA CO LTD
ISHIKAWAJIMA HARIMA HEAVY IND
FURUKAWA CO LTD
International Classes:
C04B35/584; C04B35/76; C22C47/00; C22C49/14; (IPC1-7): C04B35/584; C04B35/76; C22C49/14
Attorney, Agent or Firm:
Masahaya Hayakawa (3 outside)
Previous Patent: SILICON CARBIDE SINTERED COMPACT AND ITS PRODUCTION
Next Patent: SILICON NITRIDE SINTERED COMPACT AND SUBSTRATE USING THE SAME
Next Patent: SILICON NITRIDE SINTERED COMPACT AND SUBSTRATE USING THE SAME