To obtain thick film patterns having high accuracy and high aspect ratio with high productivity even in large-area patterns by imparting a peeling liquid for dissolving or swelling the resin of thick films in regions where resist films do not exist.

A photoresist layer 3 is formed on the surface of the thick film layer 2 formed on a substrate 1. A photomask having translucent patterns of the same shape as the shape of the patterns of desired barrier ribs is arranged on the photoresist 3 surface and the photoresist is subjected to contact exposure. The exposed parts are photocrosslinked and cured and are made insoluble in a developer by the exposure. The unexposed parts are removed by development processing and the resist patterns of the same patterns as the patterns of the barrier ribs are formed. Next, the peeling liquid which has low activity to the resist patterns and dissolves or swells the resin binder of the thick film layer 2 is applied over the entire surface to dissolve or swell the resin of the thick film layer in the regions not coated with the resist. The remaining resist is thereafter peeled and 15 baked, by which the barrier ribs 2 are formed.