PURPOSE: To improve the shape of a thin film by directing the sputtering surface downward, arranging a substrate obliquely to a target or arranging a shielding plate above a line connecting the laser irradiation position on the target and the substrate.

CONSTITUTION: A substrate 8 with the sputtering surface turned downward is arranged at a specified distance from the target 6 of a YBa2Cu3O7 sintered compact, etc., and inclined to the target 6 at a definite angle in accordance with the distance. The target 6 is then irradiated with a short-pulse laser beam at the gaseous pressure of 10-6 to 0.2Torr with an energy density of 0.01-10J/cm2 at the target surface. The vaporized atom and molecule follow a straight locus 17, the globular particle of about 1μm diameter describes a parabolic locus 6, and the impingement speed at the substrate 8 has a finite vertical component. Since the substrate 8 is arranged obliquely to the target 6, the arrival of the globular particle on the substrate 8 is prevented, and a good-quality ceramic thin film is obtained. Meanwhile, even when the shielding plate is arranged above the line connecting the target 6 and substrate 8, the arrival of the globular particle is prevented.