PURPOSE: To make a wiring pattern to come in contact with a step even when a second mask is formed staggeredly with respect to the step by coating a part of a wiring layer formed within the step on a substrate with a first mask formed in advance.

CONSTITUTION: When a semiconductor device is developed after exposure to light using a mask 7A, the exposed part of a photoresist 6 is partially removed. Then a masking layer 6A is formed by etching the photoresist 6 and leaving the photoresist only in an opened hole 4 with a wiring film 5 interposed therebetween. When a photoresist 11, after formed on the masking layer 6A and wiring film 5, is exposed to light with a photomask 12 as a mask and developed, the photoresist 11 remains as a masking layer 11A. Then the wiring film 5, etched with the masking layers 11A, 6A as a mask, remains as a wiring pattern 5A. Then the masking layers 11A, 6A are removed. According to the constitution, a wiring pattern whose step is in good contact can be obtained.