Title:
FORMING MATERIAL OF OHMIC CONTACT
Document Type and Number:
Japanese Patent JPS5472672
Kind Code:
A
Abstract:
PURPOSE:To obtain the ohmic connection material to the III-V group compound semiconductor crystal which is enabled to connect to n or p type crystal with low specific contact resistance, by the lower melting point and only changing the dopant. CONSTITUTION:The eutetic alloy of Au 75 wt.% and Sb 25 wt.% has the melting point of 360 deg.C which is lower than that of AuGe alloy, and this is enabled for the formation of ohmic contact as it is, but it has high specific contact resistance. The specific contact resistance is lowered by addig n type dopant Si, Ge, Sn and p type dopant Cd, Zn. The dopant is taken as 2.5 to 5 wt.% and if the range is out, the specific contact resistance s increased. With this material, the ohmic contact can be formed with lower contact resistance to the III-V group compound semiconductor easy for bonding with good reproducibility.
Inventors:
OOTSUBO CHIKAYUKI
ITOU MICHIHIRO
SEGAWA KAZUAKI
ODA TAKAO
MITSUI SHIGERU
ITOU MICHIHIRO
SEGAWA KAZUAKI
ODA TAKAO
MITSUI SHIGERU
Application Number:
JP14026677A
Publication Date:
June 11, 1979
Filing Date:
November 22, 1977
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/43; H01L21/28; H01L21/283; H01L29/40; (IPC1-7): H01L21/283; H01L29/40