Title:
FORMING METHOD FOR CONTACT
Document Type and Number:
Japanese Patent JPS5769735
Kind Code:
A
Abstract:
PURPOSE:To draw an accurate pattern by forming a metallic film to become a primary wire on a semiconductor substrate, then plasma treating it to roughen the surface of the metallic film and forming the reflected state in the same manner as the substrate region, and then forming an interlayer insulating film. CONSTITUTION:An insulating film 3 is formed on a semiconductor substrate 1, and a metallic film 4 to become a primary layer wire is covered thereon. It is plasma treated, to roughen the surface of the film 4 in such a manner that the reflected state becomes similar to that of a reverse conductive type region 3. An interlayer insulating film is covered, a resist film 6 is formed, and when it is photosensitized, the creeping of the reflecting light due to the difference of the reflectivity can be eliminated, and accordingly the diameter of the hole 8 of the film becomes equal to that of the hole 7 corresponding to the region 2. Thus, faithful pattern can be drawn, and it becomes not necessary to mixe reflection preventive agent in the resist film.
Inventors:
TAINO NOBUYASU
Application Number:
JP14715780A
Publication Date:
April 28, 1982
Filing Date:
October 20, 1980
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L21/3213; H01L21/027; H01L21/28; (IPC1-7): H01L21/28; H01L21/30; H01L21/88