FORMING METHOD FOR FILM, FOR THIN FILM TRANSISTOR, FOR LIQUID CRYSTAL DEVICE AND FOR SOLAR CELL

Title:

FORMING METHOD FOR FILM, FOR THIN FILM TRANSISTOR, FOR LIQUID CRYSTAL DEVICE AND FOR SOLAR CELL

Document Type and Number:

Japanese Patent JPH06124910

Kind Code:

A

Abstract:

PURPOSE: To improve film quality of an insulation film by enlarging band gap of a semiconductor film and by improving conductivity regarding a formation method of a multidimensional semiconductor film or an insulation film formed by a parallel plane type plasma chemical vapor growth device.

CONSTITUTION: In the title method for forming a film which contains at least one of constituent elements of each gaseous raw material by activation gas which is activated by a gas activation part between opposing electrodes 22, 28 containing at least one of hydrogen gas and gaseous raw material by using two or more kinds of hydrogen gas and gaseous raw material on a formation body 31, hydrogen gas is steadily introduced to the gas activation part, and one or more kinds of gas is selected one by one from two or more kinds of gaseous raw material and activated in an activation part to contain at least gaseous raw material to be activated during an activation period of gaseous raw material and not to contain other gaseous raw material which has hydrogen compound whose binding energy is smaller than binding energy of hydrogen compound constituting the gaseous raw material to be activated.

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Inventors:

SUGA KATSUYUKI
TANAKA TSUTOMU
YANAI KENICHI
OGATA HIROSHI
TOMIZUKA NORIO

Application Number:

JP14085693A

Publication Date:

May 06, 1994

Filing Date:

June 11, 1993

Export Citation:

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Assignee:

FUJITSU LTD

International Classes:

G02F1/136; G02F1/1368; H01L21/205; H01L21/31; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/205; G02F1/136; H01L21/31; H01L21/336; H01L29/784

Attorney, Agent or Firm:

Keizo Okamoto

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