Title:
FORMING METHOD OF INSULATION FILM
Document Type and Number:
Japanese Patent JPS5448484
Kind Code:
A
Abstract:
PURPOSE:To avoid the short circuit, by performing heat treatment the polycrystal or amorphous substance formed selectively under oxidative atomoshere, removing the oxide film caused at his time, performing again heat treatment under oxidative atomosphere, and by using the oxide film obtained as the insulation film. CONSTITUTION:The first gate oxide film 23 and the polycrystal Si layer 24 are grown on the P type Si subsrrate 22 with lamination, and the conductivity is given by diffusing the N type impurity on the layer 24. Next, the masks 25-a to 25-c of photo resist film are placed on the surface of the layer 24, the layer 24 is plasma etched by taking this as the mask into the first layer electrode, leaving 26-a to 26-c. After that, the resist film mask is eliminated, heat treatment is made under oxidic atomosphere, oxide films 27-a to 27-c are caused on the electrodes 26-a to 26-c, and the exposed parts 28-a to 28-b of the film 23 and films caused are removed by etching. Further, heat treatment is made again under oxidative atomosphere, and excellent oxides 30-a to 30-c are caused on the electrode 26-a to 26-c newly and the oxide films 29-a to 29-c are produced on the substrate 22.
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Inventors:
OKANO HARUO
HARADA NOZOMI
KUBOTA NOBUHISA
HARADA NOZOMI
KUBOTA NOBUHISA
Application Number:
JP10319277A
Publication Date:
April 17, 1979
Filing Date:
August 30, 1977
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/283; H01L21/31; H01L21/321; H01L21/28; H01L21/339; H01L21/8247; H01L29/762; H01L29/788; H01L29/792; (IPC1-7): H01L21/283; H01L21/94; H01L27/10