Title:
FORMING METHOD OF METAL NITRIDE FILM IN CONTACT HOLE, AND METAL NITRIDE FILM FORMED BY THE SAME METHOD
Document Type and Number:
Japanese Patent JP2005340830
Kind Code:
A
Abstract:
To provide the forming method of a metal nitride film in a contact hole and the metal nitride film formed by the same method.
In the manufacturing method of a semiconductor integrated circuit capable of forming the metal film in the integrated circuit, the metal nitride film is formed in a recess, the metal nitride film has a first nitrogen concentration at the bottom of the recess and has a second nitrogen concentration at a portion adjacent to the entrance of the recess, and the first nitrogen concentration is lower than the second nitrogen concentration.
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Inventors:
HAN SUNG-HO
CHOI GIL-HEYUN
LEE SANG WOO
KIM RAK-HWAN
CHOI KYOUNG-IN
CHOI GIL-HEYUN
LEE SANG WOO
KIM RAK-HWAN
CHOI KYOUNG-IN
Application Number:
JP2005153081A
Publication Date:
December 08, 2005
Filing Date:
May 25, 2005
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
C23C14/06; C23C16/20; H01L21/28; H01L21/283; H01L21/285; H01L21/3205; H01L21/768; (IPC1-7): H01L21/285; C23C14/06; C23C16/20; H01L21/28; H01L21/768
Domestic Patent References:
| JP2002280387A | 2002-09-27 | |||
| JPH0936228A | 1997-02-07 | |||
| JP2001267269A | 2001-09-28 |
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
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