Title:
FORMING METHOD FOR NI ELECTRODE OF SIC SUBSTRATE
Document Type and Number:
Japanese Patent JPS58138027
Kind Code:
A
Abstract:
PURPOSE:To form an Ni electrode of small resistance on an SiC substrate, by evaporating Ni directly from an Ni heater at least to an Ni layer contacted on an SiC substrate. CONSTITUTION:An Ni motor 11 is formed of an Ni plate into a coil form. When a space is made between the Ni heater 11 and the SiC substrate 12, and current is let gradually flow into the heater 11 in a vacuum resulting in a heating evaporation until the heater 11 disconnects, the Ni layer 13 is formed on the substrate 12. Next, an Ni alloy layer 14 is formed on the SiC substrate 12 by heat- treating the substrate 12 whereon the Ni layer 13 is formed in a vacuum high temperature, and accordingly an Ni electrode having an ohmic property is completed.
Inventors:
MIZUGUCHI KIMIHIDE
Application Number:
JP2137982A
Publication Date:
August 16, 1983
Filing Date:
February 12, 1982
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L21/28; H01L21/443; H01L29/45; (IPC1-7): H01L21/28
Attorney, Agent or Firm:
Takuji Nishino
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