Title:
FORMING METHOD FOR OXIDE FILM
Document Type and Number:
Japanese Patent JPH08238745
Kind Code:
A
Abstract:
PURPOSE: To realize the formation of an insulating film such as a dense gate oxide film adapted for high reliability of an insulating film such as a gate oxide film in the case of developing a MOS transistor.
CONSTITUTION: Ozone is introduced to a natural oxide film formed on a silicon wafer 1 while emitting ultraviolet rays at 25°C or lower by wet cleaning the wafer 1 to form a silicon oxide film. A silicon dioxide film formed on the wafer 1 is heat-treated in an atmosphere containing the ozone.
Inventors:
OKUBO SATOSHI
TAMURA YASUYUKI
AOYAMA ATSUYUKI
NAKANISHI TOSHIRO
TAMURA YASUYUKI
AOYAMA ATSUYUKI
NAKANISHI TOSHIRO
Application Number:
JP7726195A
Publication Date:
September 17, 1996
Filing Date:
March 07, 1995
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/316; B41F7/40; B41F33/10; (IPC1-7): B41F7/40; B41F33/10
Attorney, Agent or Firm:
Teiichi