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Patent Searching and Data


Title:
FORMING METHOD OF POLYSILICON FILM AND THIN FILM TRANSISTOR CONSISTING OF POLYSILICON FILM FORMED BY THIS METHOD
Document Type and Number:
Japanese Patent JP2005123355
Kind Code:
A
Abstract:

To make a required space small and permit the reduction of a cost.

At first, a part except a pattern forming region is made repellent to liquid through the liquid repellent treatment 10 of a glass substrate. The liquid repellent treatment 10 consists of a liquid repellent film forming process 10a for forming a liquid repellent film on the glass substrate, and a patterning process 10b for patterning the liquid repellent film. Next, a solution applying process 12 is effected in non-oxidizing atmosphere to apply a solution obtained by dispersing the powder of amorphous silicon into a solvent on the pattern forming region of the glass substrate. Thereafter, a drying process 14 is effected in the non-oxidizing atmosphere and the solution is dried to form an amorphous silicon film. Subsequently, an annealing process 16 is effected in the non-oxidizing atmosphere to irradiate laser against the amorphous silicon film and obtain a polysilicon film by heating the amorphous silicon film.


Inventors:
MORI YOSHIAKI
Application Number:
JP2003355821A
Publication Date:
May 12, 2005
Filing Date:
October 16, 2003
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/20; H01L21/208; H01L21/336; H01L29/786; (IPC1-7): H01L21/20; H01L21/208; H01L21/336; H01L29/786
Attorney, Agent or Firm:
Yuichi Murakami
Okubo Misao