Title:
FUSE DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP3049001
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize a small occupied area along with high reliability for laser beam irradiation by providing a second conductivity type of a second well which has a second depth deeper than first depth and a bottom smaller than one of a first well, in a region including an aperture in the bottom of the first well.
SOLUTION: A P-type semiconductor region 2 is formed with a P-type semiconductor substrate 1 and a P-well 4, and a field oxide film 5, a first interlayer insulating film 6, a polysilicon film 8, a second interlayer insulating film 7 and a cover film 12 are formed thereon in ascending order. The polysilicon film 8 is an interconnection layer used as a fuse device and is connected through interconnection layers 10-1, 10-2 and contact regions 9-1, 9-2 which are formed on the second interlayer insulating film 7. An aperture 13 is provided on the cover film 12, and laser beam is emitted through the aperture 13. a deep N-well 3-1 and a shallow N-well 3-2 are formed. Thereby, high reliability for laser beam irradiating and micro-structure of the device are simultaneously realized.
Inventors:
Tomoya Ikuyama
Application Number:
JP2979898A
Publication Date:
June 05, 2000
Filing Date:
February 12, 1998
Export Citation:
Assignee:
NEC IC Microcomputer System Co., Ltd.
International Classes:
H01L21/82; H01L23/525; H01L21/822; H01L27/04; (IPC1-7): H01L21/82
Domestic Patent References:
JP61176135A | ||||
JP63260149A | ||||
JP383361A | ||||
JP541481A | ||||
JP7211779A | ||||
JP888281A | ||||
JP917874A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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