Title:
GAALAS INFRARED LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPS6428971
Kind Code:
A
Abstract:
PURPOSE:To obtain a GaAlAs infrared light emitting diode which gets high efficiency at wavelength 710nm or longer and is operated by application of low consumption power, by specifying a ratio of Al mixed crystal. CONSTITUTION:A p-Ga1-yAly As clad layer (2), a p-Ga1-xAlxAs luminous layer (3), an n-Ga1-yAly As clad layer (4), and an n-Ga1-zAlzAs window layer (5) are formed serially on a p-GaAs substrate (1) by a smooth cooling method, so that a light emitting diode of a double hetero type of socalled tetra-layered structure is formed. Al mixed crystal ratios x, y, z are respectively defined; 0<=x<=0.3, x+0.05<=y<=x+0.3, z>y and z>=0.65. When the n-Ga1-yAlyAs clad layer is made to be 5-30mum in its thickness, an absorbing action inside the semiconductor is reduced, so that a higher luminous output can be obtained.
Inventors:
SHIOMI YUJI
Application Number:
JP18587487A
Publication Date:
January 31, 1989
Filing Date:
July 24, 1987
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L33/14; H01L33/30; (IPC1-7): H01L33/00
Domestic Patent References:
| JPS59145581A | 1984-08-21 | |||
| JPS57193080A | 1982-11-27 | |||
| JPS5958879A | 1984-04-04 | |||
| JPS59213179A | 1984-12-03 |
Attorney, Agent or Firm:
Sugiyama Takeshi