GAAS SEMICONDUCTOR DEVICE AND ITS MANUFACTURE - SUMITOMO ELECTRIC INDUSTRIES

Title:

GAAS SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH077024

Kind Code:

A

Abstract:

PURPOSE: To provide a GaAs semiconductor device where gold layer is firmly adhered to the rear side of the GaAs semiconductor substrate and its manufacturing method.

CONSTITUTION: A substrate rear side where no elements are formed is washed by acid. Then, platinum layer 12 and gold layer 13 are successively deposited on the rear side of the GaAs semiconductor substrate 11 within a vacuum container. After that, a semiconductor device is taken out of a vacuum container and is heat-treated for 60 minutes at 250°C. Platinum causes solid phase reaction with GaAs at a temperature ranging from 250-300°C and then a stable multilayer structure of Pt-PtGa-PtAs2-GaAs is formed at the interface between the platinum layer 12 and the GaAs layer of the substrate rear side.

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Inventors:

ISHII MANABU
NAKAJIMA SHIGERU

Application Number:

JP14640093A

Publication Date:

January 10, 1995

Filing Date:

June 17, 1993

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES

International Classes:

H01L21/52; (IPC1-7): H01L21/52

Attorney, Agent or Firm:

Yoshiki Hasegawa (3 outside)

Next Patent: ADHESION METHOD OF SEMICONDUCTOR ELEMENT