Title:
GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR WITH NON-VOLATILE MEMORY
Document Type and Number:
Japanese Patent JPS5771182
Kind Code:
A
Abstract:
The invention relates to field effect transistors having a non-volatile memory effect of the MIS type. According to the invention the transistor comprises, in addition to substrate (17), a source (21), a drain (22), a grid formed by a semi-insulating film (18) and an insulating layer (19), whose semi-insulating film (18) has a thickness below 100 angströms and is formed from a semiconductive material of groups III-V having a broader forbidden band than that of the active layer (16) on which it is deposited. Useful applications of the invention include ultra-high frequency transistors for telecommunications.
Inventors:
TORON RAN NIYUUEN
Application Number:
JP12947181A
Publication Date:
May 01, 1982
Filing Date:
August 20, 1981
Export Citation:
Assignee:
THOMSON CSF
International Classes:
H01L29/788; H01L29/792; H01L21/8247; (IPC1-7): G11C11/40; H01L29/20; H01L29/78
Domestic Patent References:
| JPS5558576A | 1980-05-01 |