Title:
GALLIUM ARSENIDE-PHOSPHIDE MIXED CRYSTAL EPITAXIAL WAFER AND LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JP3785705
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enhance a light emitting diode in emission output by a method wherein the crystallographic plane orientation of the surface of a single crystal substrate is tilted in a certain direction at a certain angle.
SOLUTION: The direction of the off-angle of the surface of a single crystal substrate is set in a usual intermediate specific range of direction, and the tilt angle of the off-angle is optimized. That is, for instance, provided that a (100) plane is made to serve as a reference plane, the sides of the substrate are tilted by an angle of boat 6° or above to 16° or below in a direction which deviates from a (001) direction toward a (001) direction by an angle of about 8 to 37°, a direction which deviates from a (010) direction toward a (011) direction by an angle of about 8 to 37°, a direction which deviates from a (00-1) direction to a (0-1-1) direction by an angle of about 8 toward 37°, or a direction which deviates from a (0-10) direction toward a (0-1-1) direction by an angle of about 8 to 37°, respectively. It is preferable to obtain a higher emission power that an angle of deviation is set at about 12 to 33° and the tilt angle is set at about 8 to 15°.
Inventors:
Tadashige Sato
Application Number:
JP31170296A
Publication Date:
June 14, 2006
Filing Date:
November 22, 1996
Export Citation:
Assignee:
Mitsubishi Chemical Corporation
International Classes:
H01L21/02; H01L33/16; H01L33/30; (IPC1-7): H01L21/02; H01L33/00
Domestic Patent References:
| JP8083926A | ||||
| JP7277886A | ||||
| JP5315210A | ||||
| JP7302763A | ||||
| JP3016993A | ||||
| JP2307896A | ||||
| JP2094518A | ||||
| JP60071599A | ||||
| JP63226918A | ||||
| JP58110497A | ||||
| JP53089367A | ||||
| JP3146874B2 | ||||
| JP3531205B2 |
Attorney, Agent or Firm:
Hasegawa Soji