GALLIUM NITRIDE SUBSTRATE AND NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE

Title:

GALLIUM NITRIDE SUBSTRATE AND NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE

Document Type and Number:

Japanese Patent JP2009143802

Kind Code:

A

Abstract:

To provide a GaN substrate which can provide a larger number of nitride semiconductor elements.

An ingot 1 of a gallium nitride single crystal grown by a vapor-phase growth method is cut along specified planes S1, S2, and S3 to manufacture one or a plurality of single crystal gallium nitride substrates 7. The main surface of the single crystal gallium nitride substrate 7 is mirror-finished, and the main surface of the gallium nitride substrate 7 has a first region within 3 mm from the edge of the gallium nitride substrate 7, and a second region surrounded by the first region. The off angle formed by an axis crossing orthogonally with the main surface of the substrate and the C axis of the gallium nitride substrate takes the minimum value at a first point in the first region. The off angle formed by the axis crossing orthogonally with the main surface of the gallium nitride substrate 7 and the C axis of the gallium nitride substrate 7 is larger than zero over the second region of the main surface.

Inventors:

UENO MASANORI

Application Number:

JP2009006968A

Publication Date:

July 02, 2009

Filing Date:

January 15, 2009

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES

International Classes:

C30B29/38; C30B33/00; H01L33/06; H01L33/32

Domestic Patent References:

JP2000022212A	2000-01-21
JP2005340747A	2005-12-08
JP2003133650A	2003-05-09
JP2001196632A	2001-07-19

Attorney, Agent or Firm:

Yoshiki Hasegawa
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo

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