To provide a GaN based light emitting element which has a high confinement effect for carriers injected into a light emitting layer and is hard to develop cracks.
A light emitting element is provided with a substrate 1, a light emitting layer 5, a first clad layer 3 and a second clad layer 7 which are so arranged as to sandwich the light emitting layer 5, and stopper layers 5 and 6 which are provided between the light emitting layer 5 and the first and second clad layers 3 and 7 and which prevent transmittance of carriers. Composition of Al in the stopper layer 6, its film thickness and composition of Al in the clad layer 7, its film thickness are properly regulated. For example the second stopper layer 6 is formed as AlX2Ga1-X2N: X2=0.1 to 0.5, the thickness is made to be 10 to 50nm, the second clad layer 7 is formed as AlY2Ga1-Y2N: Y2=0 to 0.15 and the thickness is made to be 100 to 1000nm.
| JPH0946001 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURE |
| JP2002026385 | LIGHT EMITTING DIODE |
| JP2008047774 | MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING DEVICE |
NAGAI SEIJI
YAMAZAKI SHIRO
HIRAMATSU TOSHIO
AKASAKI ISAMU
AMANO HIROSHI
AKASAKI ISAMU
AMANO HIROSHI
KAGAKU GIJUTSU SHINKO JIGYODAN
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