To improve performance in a film deposited on a semiconductor workpiece.
A gas distribution apparatus has a reacting gas supplying plate connecting to a supply source of at least first and second reacting gases, at least one reacting gas distributing plate connecting to the reacting gas supplying plate and on which at least one of the first and second reacting gases uniformly disperse, and a reacting gas transmission-face plate connecting to the reacting gas distributing plate. The first and second reacting gases are always isolated in a process which they respectively pass the reacting gas supplying plate, the reacting gas distributing plate and the reacting gas transmission-face plate, and escape from the reacting gas transmission-face plate by a uniform distribution method at the last. A semiconductor workpiece processing reactor using the gas distribution apparatus is also provided.
WANG SHULIN
FU LI
LV QING
CHIN AIKA
IN SHIGYO
| JP2003504866A | 2003-02-04 | |||
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Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura