Title:
GAS FLOW DEPOSITION DEVICE AND GAS FLOW DEPOSITION METHOD
Document Type and Number:
Japanese Patent JP2015129316
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To reduce a moisture content included in an organic material deposited on a substrate.SOLUTION: A gas flow deposition device 20 includes: an MFC 400 for controlling a flow amount of carrier gas, and a heat exchanger 300 for heating the carrier gas with the flow amount controlled by the MFC. The gas flow deposition device 20 includes: a material vessel 200 which contains a vapor material inside, and which discharges carrier gas heated by the heat exchanger and vapor of the vapor material, and a vapor head 100 which injects vapor of the vapor material drained from the material vessel 200 and gas including the carrier gas. The heat exchanger 300 is formed so that there is pressure difference between an inflow side of the carrier gas and an outflow side of the carrier gas.
Inventors:
MORITA OSAMU
Application Number:
JP2012097033A
Publication Date:
July 16, 2015
Filing Date:
April 20, 2012
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C14/24; H01L51/50; H05B33/10
Attorney, Agent or Firm:
Hiroaki Sakai