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Title:
GATE CIRCUIT OF GTO THYRISTOR
Document Type and Number:
Japanese Patent JPS6150420
Kind Code:
A
Abstract:

PURPOSE: To improve the efficiency as the entire gate circuit and the reliability by providing separately a transistor (TR) circuit for higher gate conducting a GTO thyristor and a TR circuit keeping the conductive state and connecting them in parallel.

CONSTITUTION: In order to make the GTO thyristor 1 conductive, an ON/OFF signal generating circuit 4 responds to a control signal from a control system 5, generates an ON signal, gives to a TRQ22 of a turn-on circuit and to a higher gate pulse generating circuit 6. The pulse generating circuit 6 generates a pulse signal having a pulse width corresponding to the higher gate period as soon as the ON signal enters and gives the signal to a TRQ21, the TRQ21 is conductive, a current from the power supply 21 flows through a reistor 21 and the TRQ21 and to a gate of the GTO thyristor 1. In selecting the resistance value of the resistor R21 limiting the current to a proper value, much current having a steep leading flows to the gate.


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Inventors:
OKUNO ATSUSHI
TSUDA MASANORI
Application Number:
JP17164484A
Publication Date:
March 12, 1986
Filing Date:
August 20, 1984
Export Citation:
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Assignee:
SHINKO ELECTRIC CO LTD
International Classes:
H03K17/04; H03K17/732; (IPC1-7): H03K17/73
Domestic Patent References:
JP59118336B
Attorney, Agent or Firm:
Takeo Goto