Title:
Ｇｅ単結晶薄膜の製造方法及び光デバイス
Document Type and Number:
Japanese Patent JP6706414
Kind Code:
B2
Abstract:
The purpose of the present invention is to provide a method for producing a Ge single crystal thin film by which a Ge single crystal thin film having a reduced number of threading dislocations can be formed on a Si substrate without carrying out a heat treatment; and an optical device provided with a Ge single crystal thin film produced using the production method. This method for producing a Ge single crystal thin film comprises forming lines and spaces of a thin dielectric material on a Si substrate and growing Ge thereupon. With respect to threading dislocations in a Ge single crystal thin film produced using this production method, by adjusting the lines and spaces and the Ge film thickness, a threading dislocation density of 1×105 cm-2 can be achieved and the number of threading dislocations can be greatly reduced. Therefore, the number of carrier recombination defects is reduced in this optical device, and as a result, the threshold current can be lowered in the case of a laser.
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Inventors:
Kazumi Wada
Yagi Motoki
Naokatsu Yamamoto
Tetsuya Kawanishi
Koichi Akabane
Takahide Sakamoto
Yagi Motoki
Naokatsu Yamamoto
Tetsuya Kawanishi
Koichi Akabane
Takahide Sakamoto
Application Number:
JP2015231833A
Publication Date:
June 10, 2020
Filing Date:
November 27, 2015
Export Citation:
Assignee:
National Institute of Information and Communications Technology
International Classes:
H01L21/20; C23C16/04; C30B25/04; C30B29/08; G02F1/015; H01L21/205; H01S5/32
Domestic Patent References:
| JP2011142294A | ||||
| JP2005537672A |
Foreign References:
| US20120028444 | ||||
| US20080001169 | ||||
| US20070228384 | ||||
| US20150130017 | ||||
| US20150179664 | ||||
| US20080099785 |
Other References:
Ju Hyung Nam,Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon,Journal of Crystal Growth,2015年 4月15日,Vol.416,Page.21-27
V.D.Cammilleri,Lateral epitaxial growth of germanium on silicon oxide,APPLIED PHYSICS LETTERS,2008年,Vol.93 No.4,Page.043110
V.D.Cammilleri,Lateral epitaxial growth of germanium on silicon oxide,APPLIED PHYSICS LETTERS,2008年,Vol.93 No.4,Page.043110
Attorney, Agent or Firm:
Kenji Okada
Katsuhiro Imashita
Katsuhiro Imashita
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