Title:
ガラス基板
Document Type and Number:
Japanese Patent JP5733639
Kind Code:
B2
Abstract:
Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point −50° C.) is lower than an average cooling rate from the (annealing point +100° C.) to the annealing point.
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Inventors:
Yoshinari Kato
Eiji Matsuki
Eiji Matsuki
Application Number:
JP2013081022A
Publication Date:
June 10, 2015
Filing Date:
April 09, 2013
Export Citation:
Assignee:
Nippon Electric Glass Co., Ltd.
International Classes:
C03B17/06; C03C3/091
Domestic Patent References:
| JP9278465A | ||||
| JP2002308643A |
Foreign References:
| WO2007136054A1 | ||||
| WO2007069739A1 |