Title:
III族窒化物半導体薄膜およびIII族窒化物半導体発光素子
Document Type and Number:
Japanese Patent JP4888857
Kind Code:
B2
Abstract:
A group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same. The group III nitride semiconductor thin film includes a substrate with a concave and convex portions formed thereon; a buffer layer formed on the substrate and made of a group III nitride; and an epitaxial growth layer formed on the buffer layer and made of (11-20) plane gallium nitride. The group III nitride light emitting device includes the group III nitride semiconductor thin film. The present invention allows a high quality a-plane group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same.
Inventors:
Shiro Sakai
Miki Naoi
Cui Rak Shun
Miki Naoi
Cui Rak Shun
Application Number:
JP2006077492A
Publication Date:
February 29, 2012
Filing Date:
March 20, 2006
Export Citation:
Assignee:
Tokushima University
Samsung Electro-Mechanics Co., Ltd.
Samsung Electro-Mechanics Co., Ltd.
International Classes:
C30B29/38; C30B25/18; H01L21/205; H01L33/06; H01L33/12; H01L33/32; H01L33/40
Domestic Patent References:
| JP2006510227A |
Foreign References:
| WO2005112078A1 |
Other References:
THEERADETCH DETCHPROHM, et al.,Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates A New Approach for Growing Low Dislocation Density GaN Single Crystals,Jpn.J.Appl.Phys.,2001年 1月15日,Vol.40, No.1A/1B,pp.L16-L19
T.PASKOVA, et al.,Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers,Journal of Crystal Growth,2005年,Vol.281,p.55-61
KAZUHIDE KUSAKABE and KAZUHIRO OHKAWA,Morphological Characteristics of a-Plane GaN Grown on r-Plane Sapphireby Metalorganic Vapor-Phase Epitaxy,Japanese Journal of Applied Physics,2005年,Vol. 44, No. 11,,pp.7931-7933
岡川広明、外4名,LEPS 法を用いた高出力紫外LED の開発,三菱電線工業時報,2001年10月,第98号,p.92-96
M.D.CRAVEN,Structural characterization of nonpolar (11-20) a-plane GaN thin films grown on (1-102) r-plane sapphire ,Appl. Phys. Lett.,2002年,Vol.81, No.3,pp.469-471
T.PASKOVA, et al.,Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers,Journal of Crystal Growth,2005年,Vol.281,p.55-61
KAZUHIDE KUSAKABE and KAZUHIRO OHKAWA,Morphological Characteristics of a-Plane GaN Grown on r-Plane Sapphireby Metalorganic Vapor-Phase Epitaxy,Japanese Journal of Applied Physics,2005年,Vol. 44, No. 11,,pp.7931-7933
岡川広明、外4名,LEPS 法を用いた高出力紫外LED の開発,三菱電線工業時報,2001年10月,第98号,p.92-96
M.D.CRAVEN,Structural characterization of nonpolar (11-20) a-plane GaN thin films grown on (1-102) r-plane sapphire ,Appl. Phys. Lett.,2002年,Vol.81, No.3,pp.469-471
Attorney, Agent or Firm:
Longhua International Patent Service Corporation
Hiroaki Sakai
Hiroaki Sakai