Title:
GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH10242586
Kind Code:
A
Abstract:
To obtain superior crystallinity and to prevent a crack from caused, by doping an n-type AlGaInN layer adjacent to a buffer layer with first impurities and second impurities.
In a group III nitride semiconductor device in which a plurality of layers comprising AlGaInN are laminated over a single-crystal substrate with a buffer comprising AlN in between, an n-type AlGaInN layer adjacent to a buffer layer is doped with first impurities comprising at least one out of C, Si, Ge and O, and second impurities comprising at least one out of Mg, Ca, Zn, Cd, Hg, S or Se.
Inventors:
MATSUI TOSHIYUKI
SUZUKI TAKESHI
OI AKIHIKO
MATSUYAMA HIDEAKI
KAMIJO HIROSHI
SUZUKI TAKESHI
OI AKIHIKO
MATSUYAMA HIDEAKI
KAMIJO HIROSHI
Application Number:
JP5559097A
Publication Date:
September 11, 1998
Filing Date:
February 24, 1997
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L21/203; H01L21/205; H01L33/12; H01L33/16; H01L33/32; H01S5/00; H01S5/323; H01S5/343; (IPC1-7): H01S3/18; H01L21/203; H01L33/00
Attorney, Agent or Firm:
Shoji Shinobe