Title:
GROWTH OF LITHIUM BORATE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3213806
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for growing lithium borate single crystals that can prevent fast sticking of a crucible to a grown crystal to afford a lithium borate single crystal of good quality in a good yield.
SOLUTION: The inner surface of a crucible 4 made of graphite within the range of the tip of the crucible 4 to 1-5 cm below the top surface A of a raw material melt is covered with a metallic foil 40 such as platinum and a raw material for the lithium borate is then placed therein. The raw material is then heated with a heater 6 to provide a raw material melt 3 for the lithium borate. The melt is moved through the interior of a furnace core tube 7 to the side of a low temperature and slowly solidified to thereby grow the lithium borate single crystal 1. The platinum is platinum, platinum rhodium, etc. When the crystal growth is completed, the metallic foil 40 is lifted to take out the grown crystal from the crucible 4 with the metallic foil 40 and all. The metallic foil 40 is subsequently removed to provide the lithium borate single crystal 1.
Inventors:
Hiroto Ueno
Isao Yamaga
Kazuo Miwa
Isao Yamaga
Kazuo Miwa
Application Number:
JP8805097A
Publication Date:
October 02, 2001
Filing Date:
April 07, 1997
Export Citation:
Assignee:
Hiyo Engineering Co., Ltd.
International Classes:
C30B11/00; C30B29/22; H01L21/208; (IPC1-7): C30B29/22; C30B11/00
Domestic Patent References:
| JP920596A | ||||
| JP58148071A |
Attorney, Agent or Firm:
Hiroshi Arafune