Title:
GROWTH METHOD OF SEMICONDUCTOR CRYSTAL AND FORMING METHOD OF MOS TYPE TRANSISTOR
Document Type and Number:
Japanese Patent JPH06151305
Kind Code:
A
Abstract:
PURPOSE: To reduce crystal defect and enable uniform crystal growth.
CONSTITUTION: In a growth method of semiconductor crystal, an amorphous silicon layer 16 is formed on an insulating substrate 10, and crystal grains are formed from the amorphous silicon layer 16. In only one portion of an isolated region 16A of the amorphous silicon layer, a nucleous growth region 18 turning to the seed of nucleous growth is formed.
Inventors:
YAMAMOTO HIROSHI
Application Number:
JP31426392A
Publication Date:
May 31, 1994
Filing Date:
October 30, 1992
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/20; H01L21/265; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/20; H01L21/265; H01L21/336; H01L29/784
Attorney, Agent or Firm:
Takahisa Yamamoto