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Title:
HALFTONE TYPE PHASE SHIFT MASK WITH SHADING REGION
Document Type and Number:
Japanese Patent JP2001022048
Kind Code:
A
Abstract:

To decrease the number of production stages for a blank for a halftone type phase shift mask and the halftone type phase shift mask and to enable the control of a phase difference and transmittance with high accuracy.

A halftone/shading layer 2 consisting of a zirconium oxide film having the same film thickness as the film thickness of shading regions is formed by reactive sputtering, etc., on a transparent substrate 1 and is subjected to a patterning treatment by dry etching, etc., by which the shading regions 2a and a translucent layer 2c is formed. Further, the translucent layer 2c is subjected to the patterning treatment, by which the halftone type phase shift mask 10 having the shading regions 2a, the translucent regions 2b and apertures 3 on the transparent substrate 1 is obtained. The transparent substrate 1 of the apertures 3 is subjected to prescribed dry etching by dry etching, etc., and is thus provided with dug parts 4 for phase difference regulation, by which the halftone type phase shift mask 20 with the shading regions is obtained.


Inventors:
FUKUHARA NOBUHIKO
MATSUO TADASHI
HARAGUCHI TAKASHI
KANAYAMA KOICHIRO
Application Number:
JP19312899A
Publication Date:
January 26, 2001
Filing Date:
July 07, 1999
Export Citation:
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Assignee:
TOPPAN PRINTING CO LTD
International Classes:
H01L21/027; G03F1/29; G03F1/32; G03F1/68; (IPC1-7): G03F1/08; H01L21/027
Domestic Patent References:
JPH10186630A1998-07-14
JPH1184624A1999-03-26
JPH1010699A1998-01-16
JPH1126355A1999-01-29



 
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