Title:
HEAT TREATMENT FOR OXIDE THIN FILM
Document Type and Number:
Japanese Patent JPS59139688
Kind Code:
A
Abstract:
PURPOSE:To enable to realize a thermal treatment method for BPB thin films not being accompanied with the precipitation of a dendrite-shaped microcrystal by a method wherein Pb3O4 or PbO is used instead of powders of PbO2 as the lead oxide, when oxide BPB thin films obtained by performing a sputtering are performed a heat treatment in an oxygen flow along with powders of the lead oxide. CONSTITUTION:BPB thin films 1 formed according to a double-poles sputtering method where placed on a boat 3 of alumina being putted in with powders 2 of Pb3O4, a crucible 5 having microventilating holes 4 of 1.5X3mm.<2> in depth at both ends thereof was put on and thermal treatments were performed in the oxygen gas flow 7 of 1.0l/min for twelve hours at 550 deg.C. At that time, the thermal treatments were performed in such a way as to alternately change the amount of Pb3O4 powders 2 to one of 5g, 10g or 15g. As a result, in any case of the treatments, a dendrite-shaped microcrystal 9, which was generated when PbO2 powders were used, was not precipitated and, instead of the microcrystal, the superconductive thin films of BPB having mirror surfaces could be obtained. The critical temperatures Tc (in K) of the films in the individual case of the treatments are 5-6 K or thereabouts, and no big change due to the amount of powders is observed.
Inventors:
HIDAKA YOSHIKAZU
SUZUKI MINORU
MURAKAMI TOSHIAKI
INAMURA TAKAHIRO
SUZUKI MINORU
MURAKAMI TOSHIAKI
INAMURA TAKAHIRO
Application Number:
JP1285483A
Publication Date:
August 10, 1984
Filing Date:
January 31, 1983
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L39/12; C01G1/00; C01G21/02; C01G29/00; C23C14/58; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): H01L39/24
Attorney, Agent or Firm:
Hiroshi Nakamoto